Specification	SSM6J771G,LF

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	8.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	9.8 nC
Input Capacitance (Ciss) (Max) @ Vds	870 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-UFBGA, WLCSP
Power Dissipation (Max)	1.2 W
Rds On (Max) @ Id, Vgs	31 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

SSM6J771 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -5.0 A, 0.035 Ω@4.5V, WCSP6C

Part	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Technology	FET Type	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds
Toshiba Semiconductor and Storage SSM6J771G,LF	8.5 V	2.5 V	1.2 W	1.2 V	MOSFET (Metal Oxide)	P-Channel	Surface Mount	6-UFBGA WLCSP	9.8 nC	20 V	31 mOhm	12 V	150 °C	5 A	870 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -5.0 A, 0.035 Ω@4.5V, WCSP6C

Technical documentation and resources