Discrete Semiconductor Products
IPB108N15N3GATMA1
ActiveINFINEON
POWER MOSFET, N CHANNEL, 150 V, 83 A, 0.0091 OHM, TO-263 (D2PAK), SURFACE MOUNT
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Discrete Semiconductor Products
IPB108N15N3GATMA1
ActiveINFINEON
POWER MOSFET, N CHANNEL, 150 V, 83 A, 0.0091 OHM, TO-263 (D2PAK), SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPB108N15N3GATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 83 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 8 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 55 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3230 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) [Max] | 214 W |
| Rds On (Max) @ Id, Vgs | 10.8 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB108 Series
The 150 V OptiMOS™ achieves a reduction in RDS(on)of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.
Documents
Technical documentation and resources