Discrete Semiconductor Products

D1230N18TXPSA1

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1800 V RECTIFIER DIODE IN A CERAMIC DISC WITH 48 MM DIA AND A HEIGHT OF 14 MM

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Discrete Semiconductor Products

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1800 V RECTIFIER DIODE IN A CERAMIC DISC WITH 48 MM DIA AND A HEIGHT OF 14 MM

Technical Specifications

Parameters and characteristics for this part

Specification	D1230N18TXPSA1

Current - Average Rectified (Io)	1230 A
Current - Reverse Leakage @ Vr	50 mA
Mounting Type	Clamp On
Operating Temperature - Junction [Max]	180 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-200AA, A-PUK
Speed [Min]	200 mA, 500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1800 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.063 V

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Speed [Min]	Current - Reverse Leakage @ Vr	Mounting Type	Package / Case	Technology
INFINEON D1230N18TXPSA1	1.063 V	180 °C	-40 °C	1800 V	1230 A	200 mA 500 ns	50 mA	Clamp On	A-PUK DO-200AA	Standard

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General part information

The D1230NRectifier Diode discsare assembled in high reliable, robust and hermetic sealed ceramic housings with a dia of 48mm and a height of 14mm.

Technical documentation and resources