Specification	HUF76423P3

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Input Capacitance (Ciss) (Max) @ Vds	1060 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	85 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	3 V

HUF76423P3 Series

N-Channel Logic Level UltraFET Power MOSFET 60V, 33A, 35mΩ

Part	Vgs (Max)	Power Dissipation (Max) [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
ON Semiconductor HUF76423P3	16 V	85 W	TO-220-3	4.5 V 10 V	1060 pF	60 V	TO-220-3	-55 °C	175 ░C	MOSFET (Metal Oxide)	Through Hole	35 A	34 nC	N-Channel	3 V	30 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel Logic Level UltraFET Power MOSFET 60 V, 33 A, 35 mΩ

Technical documentation and resources