Discrete Semiconductor Products

IPC022N03L3X1SA1

NRND

MOSFET N-CH 30V 1A SAWN ON FOIL

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Discrete Semiconductor Products

NRND

MOSFET N-CH 30V 1A SAWN ON FOIL

Technical Specifications

Parameters and characteristics for this part

Specification	IPC022N03L3X1SA1

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Mounting Type	Surface Mount
Package / Case	Die
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	Sawn on foil
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.2 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	FET Type	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C
INFINEON IPC022N03L3X1SA1	10 V	50 mOhm	N-Channel	MOSFET (Metal Oxide)	30 V	Sawn on foil	Die	2.2 V	Surface Mount	1 A

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General part information

N-Channel 30 V 1A (Tj) Surface Mount Sawn on foil

Technical documentation and resources

No documents available