SQJ150EP-T1_GE3

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MOSFET N-CH 40V 66A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 40V 66A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ150EP-T1_GE3

Current - Continuous Drain (Id) @ 25°C	66 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1274 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	65 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	8.4 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Grade	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs [x]	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Qualification	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SQJ150EP-T1_GE3	1274 pF	PowerPAK® SO-8	-55 °C	175 ░C	65 W	Surface Mount	N-Channel	40 V	Automotive	3.5 V	PowerPAK® SO-8	20 nC	66 A	MOSFET (Metal Oxide)	8.4 mOhm	20 V	AEC-Q101	10 V

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General part information

N-Channel 40 V 66A (Tc) 65W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources