Discrete Semiconductor Products

IDB15E60ATMA1

Obsolete

DIODE GP 600V 29.2A TO263-3-2

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Discrete Semiconductor Products

Obsolete

DIODE GP 600V 29.2A TO263-3-2

Technical Specifications

Parameters and characteristics for this part

Specification	IDB15E60ATMA1

Current - Average Rectified (Io)	29.2 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Reverse Recovery Time (trr)	87 ns
Speed	500 ns, 200 mA
Supplier Device Package	PG-TO263-3-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2 V

Part	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Reverse Leakage @ Vr	Package / Case	Technology	Speed	Supplier Device Package	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If
INFINEON IDB15E60	87 ns	175 ░C	-55 °C	600 V	Surface Mount	50 µA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Standard	200 mA 500 ns	PG-TO263-3-2	29.2 A	2 V
INFINEON IDB15E60ATMA1	87 ns	175 ░C	-40 °C	600 V	Surface Mount	50 µA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Standard	200 mA 500 ns	PG-TO263-3-2	29.2 A	2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 600 V 29.2A Surface Mount PG-TO263-3-2

Technical documentation and resources