Discrete Semiconductor Products

MBR760-E3/45

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DIODE SCHOTTKY 60V 7.5A TO220AC

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Discrete Semiconductor Products

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DIODE SCHOTTKY 60V 7.5A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	MBR760-E3/45

Current - Average Rectified (Io)	7.5 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-220-2
Speed	500 ns, 200 mA
Supplier Device Package	TO-220AC
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	750 mV

Part	Supplier Device Package	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Speed	Package / Case
Vishay General Semiconductor - Diodes Division MBR760-E3/45	TO-220AC	7.5 A	60 V	Schottky	500 µA	175 ░C	-65 C	750 mV	Through Hole	200 mA 500 ns	TO-220-2

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General part information

Diode 60 V 7.5A Through Hole TO-220AC

Technical documentation and resources