Discrete Semiconductor Products

FJH1100_T50R

Obsolete

ON Semiconductor

DIODE GEN PURP 15V 150MA DO35

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DocumentsDatasheet

Discrete Semiconductor Products

FJH1100_T50R

Obsolete

ON Semiconductor

DIODE GEN PURP 15V 150MA DO35

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FJH1100_T50R

Capacitance @ Vr, F	2 pF
Current - Average Rectified (Io)	150 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	Axial, DO-35, DO-204AH
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-35
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.07 V

FJH1101 Series

Small Signal Diode

Part	Supplier Device Package	Capacitance @ Vr, F	Current - Average Rectified (Io)	Mounting Type	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Package / Case	Operating Temperature - Junction [Max]	Technology	Current - Reverse Leakage @ Vr
ON Semiconductor FJH1100_T50R	DO-35	2 pF	150 mA	Through Hole	Any Speed	200 mA	1.07 V	Axial DO-204AH DO-35	175 °C	Standard
ON Semiconductor FJH1101	DO-35	2 pF	150 mA	Through Hole	Any Speed	200 mA	1.1 V	Axial DO-204AH DO-35	175 °C	Standard	15 pA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FJH1101 Series

An Ultra Low Leakage Diode in the DO-35 package. The forward voltage is typically greater than 0.5 volts at 1.0 micro-ampere. This product is light sensitive, any damage to the body coating will affect the reverse leakage when exposed to light.

Documents

Technical documentation and resources