Specification	PBSS9110T-QR

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	150
Frequency - Transition	100 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Qualification	AEC-Q101
Supplier Device Package	TO-236AB
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	320 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

PBSS9110T-Q Series

100 V, 1 A PNP low VCEsat transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Frequency - Transition	Qualification	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Grade	Package / Case
Nexperia USA Inc. PBSS9110T-QR	150	100 V	Surface Mount	100 nA	1 A	PNP	100 MHz	AEC-Q101	150 °C	320 mV	TO-236AB	Automotive	SC-59 SOT-23-3 TO-236-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP low VCEsattransistor in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources