Specification	SSM3K2615R,LF

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	3.3 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	150 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

SSM3K2615R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 2.0 A, 0.3 Ω@10V, SOT-23F

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Qualification	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drain to Source Voltage (Vdss)	Grade	Supplier Device Package	Mounting Type
Toshiba Semiconductor and Storage SSM3K2615R,LF	2 A	20 V	2 V	N-Channel	1 W	300 mOhm	MOSFET (Metal Oxide)	SOT-23-3 Flat Leads	150 pF	150 °C	AEC-Q101	10 V	3.3 V	60 V	Automotive	SOT-23F	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	51396	$ 0.49

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 2.0 A, 0.3 Ω@10V, SOT-23F

Technical documentation and resources