Discrete Semiconductor Products

MPSA06BK

Active

BIPOLAR TRANSISTORS - BJT BJT, TO-92BK, 80V, 500MA, NPN

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS - BJT BJT, TO-92BK, 80V, 500MA, NPN

Technical Specifications

Parameters and characteristics for this part

Specification	MPSA06BK

Current - Collector (Ic) (Max) [Max]	500 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Mounting Type	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Power - Max [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type
Diotec Semiconductor MPSA92	Through Hole	500 mA	150 °C	-55 °C	TO-226AA	TO-226-3 TO-92-3 TO-92-3 (TO-226AA) Formed Leads	40	500 mV	250 nA	70 MHz	625 mW	TO-92	300 V	PNP
Diotec Semiconductor MPSA06BK	Through Hole	500 mA	150 °C	-55 °C	TO-226AA	TO-226-3 TO-92-3	100	250 mV			625 mW	TO-92	80 V	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

BIPOLAR TRANSISTORS - BJT BJT, TO-92BK, 80V, 500MA, NPN

Technical documentation and resources