Discrete Semiconductor Products

US1A-M3/5AT

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DIODE GEN PURP 50V 1A DO214AC

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Discrete Semiconductor Products

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DIODE GEN PURP 50V 1A DO214AC

Technical Specifications

Parameters and characteristics for this part

Specification	US1A-M3/5AT

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Speed	500 ns, 200 mA
Supplier Device Package	DO-214AC (SMA)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If [Max]	1 V

ultra fast rectifier

Part	Speed	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Mounting Type	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Package / Case	Supplier Device Package	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division US1A-E3/5AT	200 mA 500 ns	-55 °C	150 °C	1 A	1 V	Standard	Surface Mount	50 ns	50 V	15 pF	DO-214AC SMA	DO-214AC (SMA)	10 µA
Vishay General Semiconductor - Diodes Division US1A-M3/5AT	200 mA 500 ns	-55 °C	150 °C	1 A	1 V	Standard	Surface Mount		50 V		DO-214AC SMA	DO-214AC (SMA)	10 µA
Vishay General Semiconductor - Diodes Division US1A-E3/61T	200 mA 500 ns	-55 °C	150 °C	1 A	1 V	Standard	Surface Mount	50 ns	50 V	15 pF	DO-214AC SMA	DO-214AC (SMA)	10 µA

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General part information

ultra fast rectifier

Technical documentation and resources