Discrete Semiconductor Products

SIHB16N50C-E3

LTB

MOSFET N-CH 500V 16A D2PAK

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Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 16A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHB16N50C-E3

Current - Continuous Drain (Id) (Tc)	16 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	68 nC
Input Capacitance (Ciss) (Max)	1900 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	250 W
Rds On (Max)	380 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

Part	Mounting Type	FET Type	Package Name	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Vgs(th) (Max)	Technology	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Package / Case
Vishay Dale SIHB16N50C-E3	Surface Mount	N-Channel	TO-263 (D2PAK)	380 mOhm	-55 °C	150 °C	10 V	68 nC	30 V	1900 pF	250 W	5 V	MOSFET (Metal Oxide)	16 A	500 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 2.90	1m+
	Tube	1000	$ 3.21	1m+

3D models and CAD resources for this part

General part information

N-Channel 500 V 16A (Tc) 250W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources