Discrete Semiconductor Products

SI7423DN-T1-E3

LTB

MOSFET P-CH 30V 7.4A PPAK1212-8

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Discrete Semiconductor Products

LTB

MOSFET P-CH 30V 7.4A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7423DN-T1-E3

Current - Continuous Drain (Id) (Ta)	7.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	56 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max)	18 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

Part	Package / Case	FET Type	Mounting Type	Gate Charge (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Package Name	Current - Continuous Drain (Id) (Ta)	Vgs (Max)	Power Dissipation (Max)	Technology	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SI7423DN-T1-E3	PowerPAK® 1212-8	P-Channel	Surface Mount	56 nC	18 mOhm	30 V	PowerPAK® 1212-8	7.4 A	20 V	1.5 W	MOSFET (Metal Oxide)	3 V	10 V	4.5 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

P-Channel 30 V 7.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources