Discrete Semiconductor Products

IKD03N60RF

Obsolete

IGBT 600V 5A 53.6W TO252-3

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Discrete Semiconductor Products

Obsolete

IGBT 600V 5A 53.6W TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IKD03N60RF

Current - Collector (Ic) (Max) [Max]	5 A
Current - Collector Pulsed (Icm)	7.5 A
Gate Charge	17.1 nC
IGBT Type	Trench
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]	53.6 W
Reverse Recovery Time (trr)	31 ns
Supplier Device Package	PG-TO252-3
Switching Energy	90 µJ
Td (on/off) @ 25°C	10 ns, 128 ns
Test Condition	15 V, 2.5 A, 400 V, 68 Ohm
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Switching Energy	IGBT Type	Package / Case	Mounting Type	Test Condition	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Reverse Recovery Time (trr)	Td (on/off) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Pulsed (Icm)	Gate Charge	Supplier Device Package
INFINEON IKD03N60RF	90 µJ	Trench	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	2.5 A 15 V 68 Ohm 400 V	5 A	2.5 V	53.6 W	600 V	31 ns	10 ns 128 ns	175 °C	-40 °C	7.5 A	17.1 nC	PG-TO252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

IGBT Trench 600 V 5 A 53.6 W Surface Mount PG-TO252-3

Technical documentation and resources