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CBR10120W
Discrete Semiconductor Products

CBR10120W

Active
Bruckewell

SIC SCHOTTKY DIODE,1200V,10A,TO-

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CBR10120W
Discrete Semiconductor Products

CBR10120W

Active
Bruckewell

SIC SCHOTTKY DIODE,1200V,10A,TO-

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationCBR10120W
Current - Average Rectified (Io)20 A
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseTO-247-2
Package NameTO-247-2
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max)1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 7.011m+

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Description

General part information

CBR10120W

SIC SCHOTTKY DIODE,1200V,10A,TO-

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