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PG-TO220-3-1
Discrete Semiconductor Products

SPP80N04S2L-03

Obsolete
INFINEON

MOSFET N-CH 40V 80A TO220-3

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PG-TO220-3-1
Discrete Semiconductor Products

SPP80N04S2L-03

Obsolete
INFINEON

MOSFET N-CH 40V 80A TO220-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSPP80N04S2L-03
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs213 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]7930 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)300 W
Rds On (Max) @ Id, Vgs3.4 mOhm
Supplier Device PackagePG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 1.78
2920$ 1.78

Description

General part information

SPP80N Series

N-Channel 40 V 80A (Tc) 300W (Tc) Through Hole PG-TO220-3-1

Documents

Technical documentation and resources