Discrete Semiconductor Products

PHT11N06LT,135

Obsolete

MOSFET N-CH 55V 4.9A SOT223

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 55V 4.9A SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	PHT11N06LT,135

Current - Continuous Drain (Id) (Ta)	4.9 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Max)	17 nC
Input Capacitance (Ciss) (Max)	1400 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-261AA, TO-261-4
Package Name	SC-73
Power Dissipation (Max)	8.3 W, 1.8 W
Rds On (Max)	40 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	13 V
Vgs(th) (Max)	2 V

Part	Package Name	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Mounting Type	Current - Continuous Drain (Id) (Ta)	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Rds On (Max)	FET Type	Technology
NXP USA Inc. PHT11N06LT,135	SC-73	1400 pF	55 V	17 nC	Surface Mount	4.9 A	2 V	5 V	TO-261-4 TO-261AA	1.8 W 8.3 W	-55 °C	150 °C	13 V	40 mOhm	N-Channel	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.43	1m+

3D models and CAD resources for this part

General part information

N-Channel 55 V 4.9A (Ta) 1.8W (Ta), 8.3W (Tc) Surface Mount SC-73

Technical documentation and resources

No documents available