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TO-247-3
Discrete Semiconductor Products

NTHL065N65S3HF

NRND
ON Semiconductor

MOSFET, POWER, N-CHANNEL, SUPERFET<SUP>®</SUP> III, FRFET<SUP>®</SUP>, 650 V, 46 A, 65 MΩ, TO-247

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TO-247-3
Discrete Semiconductor Products

NTHL065N65S3HF

NRND
ON Semiconductor

MOSFET, POWER, N-CHANNEL, SUPERFET<SUP>®</SUP> III, FRFET<SUP>®</SUP>, 650 V, 46 A, 65 MΩ, TO-247

Technical Specifications

Parameters and characteristics for this part

SpecificationNTHL065N65S3HF
Current - Continuous Drain (Id) @ 25°C46 A
Drain to Source Voltage (Vdss)650 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs98 nC
Input Capacitance (Ciss) (Max) @ Vds4075 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max) [Max]337 W
Rds On (Max) @ Id, Vgs65 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 9.01
10$ 6.31
NewarkEach 1$ 11.71
10$ 11.35
ON SemiconductorN/A 1$ 5.81

Description

General part information

NTHL065N65S3HF Series

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.