
Deep-Dive with AI
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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | KSA1175YTA |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 150 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 120 |
| Frequency - Transition | 180 MHz |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-226-3, TO-92-3 Short Body |
| Power - Max [Max] | 250 mW |
| Supplier Device Package | TO-92S |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
KSA1175 Series
Bipolar (BJT) Transistor PNP 50 V 150 mA 180MHz 250 mW Through Hole TO-92S
Documents
Technical documentation and resources