Discrete Semiconductor Products

SI7938DP-T1-GE3

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MOSFET 2N-CH 40V 60A PPAK SO8

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Discrete Semiconductor Products

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MOSFET 2N-CH 40V 60A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7938DP-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Input Capacitance (Ciss) (Max) @ Vds	2300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	46 W
Rds On (Max) @ Id, Vgs	5.8 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Configuration	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI7938DP-T1-GE3	PowerPAK® SO-8 Dual	Surface Mount	2300 pF	2.5 V	46 W	65 nC	5.8 mOhm	40 V	2 N-Channel (Dual)	MOSFET (Metal Oxide)	-55 °C	150 °C	PowerPAK® SO-8 Dual	60 A

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General part information

Mosfet Array 40V 60A 46W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources