Discrete Semiconductor Products

IRLMS2002

Obsolete

MOSFET N-CH 20V 6.5A MICRO6

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 6.5A MICRO6

Technical Specifications

Parameters and characteristics for this part

Specification	IRLMS2002

Current - Continuous Drain (Id) @ 25°C	6.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1310 pF
Mounting Type	Surface Mount
Package / Case	SOT-23-6
Power Dissipation (Max)	2 W
Rds On (Max) @ Id, Vgs	30 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)
INFINEON IRLMS2002	30 mOhm	22 nC	Surface Mount	2.5 V	4.5 V	20 V	2 W	N-Channel	1310 pF	MOSFET (Metal Oxide)	1.2 V	6.5 A	SOT-23-6	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.63

General part information

N-Channel 20 V 6.5A (Ta) 2W (Ta) Surface Mount Micro6™(SOT23-6)

Technical documentation and resources