
LTC4444MPMS8E#PBF
ActiveHIGH VOLTAGE SYNCHRONOUS N-CHANNEL MOSFET DRIVER
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LTC4444MPMS8E#PBF
ActiveHIGH VOLTAGE SYNCHRONOUS N-CHANNEL MOSFET DRIVER
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Technical Specifications
Parameters and characteristics for this part
| Specification | LTC4444MPMS8E#PBF |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) [custom] | 2.5 A |
| Current - Peak Output (Source, Sink) [custom] | 3 A |
| Driven Configuration | Half-Bridge |
| Gate Type | MOSFET (N-Channel) |
| High Side Voltage - Max (Bootstrap) [Max] | 114 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH | 3.25 V, 1.85 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 3 mm, 0.118 in |
| Package / Case | Exposed Pad, 8-MSOP, 8-TSSOP |
| Rise / Fall Time (Typ) [custom] | 5 ns |
| Rise / Fall Time (Typ) [custom] | 8 ns |
| Supplier Device Package | 8-MSOP-EP |
| Voltage - Supply [Max] | 13.5 V |
| Voltage - Supply [Min] | 7.2 V |
LTC4444 Series
High Voltage Synchronous N-Channel MOSFET Driver
| Part | Logic Voltage - VIL, VIH | Input Type | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Package / Case | Package / Case | Driven Configuration | Qualification | Number of Drivers | High Side Voltage - Max (Bootstrap) [Max] | Gate Type | Channel Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Grade | Supplier Device Package | Voltage - Supply [Min] | Voltage - Supply [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated | 1.85 V 3.25 V | Non-Inverting | 2.5 A | 3 A | 0.118 in 3 mm | 8-MSOP 8-TSSOP Exposed Pad | Half-Bridge | AEC-Q100 | 2 | 114 V | MOSFET (N-Channel) | Independent | 5 ns | 8 ns | -40 C | 125 °C | Surface Mount | Automotive | 8-MSOP-EP | 7.2 V | 13.5 V |
Analog Devices Inc./Maxim Integrated | 1.85 V 3.25 V | Non-Inverting | 2.5 A | 3 A | 0.118 in 3 mm | 8-MSOP 8-TSSOP Exposed Pad | Half-Bridge | AEC-Q100 | 2 | 114 V | MOSFET (N-Channel) N-Channel MOSFET | Independent | 5 ns | 8 ns | -40 °C | 150 °C | Surface Mount | Automotive | 8-MSOP-EP | 7.2 V | 13.5 V |
Analog Devices Inc./Maxim Integrated | 1.85 V 3.25 V | Non-Inverting | 2.5 A | 3 A | 0.118 in 3 mm | 8-MSOP 8-TSSOP Exposed Pad | Half-Bridge | 2 | 114 V | MOSFET (N-Channel) N-Channel MOSFET | Independent | 5 ns | 8 ns | -40 C | 125 °C | Surface Mount | 8-MSOP-EP | 7.2 V | 13.5 V | ||
Analog Devices Inc./Maxim Integrated | 1.85 V 3.25 V | Non-Inverting | 2.5 A | 3 A | 0.118 in 3 mm | 8-MSOP 8-TSSOP Exposed Pad | Half-Bridge | AEC-Q100 | 2 | 114 V | MOSFET (N-Channel) | Independent | 5 ns | 8 ns | -40 C | 125 °C | Surface Mount | Automotive | 8-MSOP-EP | 7.2 V | 13.5 V |
Analog Devices Inc./Maxim Integrated | 1.85 V 3.25 V | Non-Inverting | 2.5 A | 3 A | 0.118 in 3 mm | 8-MSOP 8-TSSOP Exposed Pad | Half-Bridge | 2 | 114 V | MOSFET (N-Channel) N-Channel MOSFET | Independent | 5 ns | 8 ns | -40 C | 125 °C | Surface Mount | 8-MSOP-EP | 7.2 V | 13.5 V | ||
Analog Devices Inc./Maxim Integrated | 1.85 V 3.25 V | Non-Inverting | 2.5 A | 3 A | 0.118 in 3 mm | 8-MSOP 8-TSSOP Exposed Pad | Half-Bridge | 2 | 114 V | MOSFET (N-Channel) N-Channel MOSFET | Independent | 5 ns | 8 ns | -40 C | 125 °C | Surface Mount | 8-MSOP-EP | 7.2 V | 13.5 V | ||
Analog Devices Inc./Maxim Integrated | 1.85 V 3.25 V | Non-Inverting | 2.5 A | 3 A | 0.118 in 3 mm | 8-MSOP 8-TSSOP Exposed Pad | Half-Bridge | 2 | 114 V | MOSFET (N-Channel) | Independent | 5 ns | 8 ns | -40 °C | 150 °C | Surface Mount | 8-MSOP-EP | 7.2 V | 13.5 V | ||
Analog Devices Inc./Maxim Integrated | 1.85 V 3.25 V | Non-Inverting | 2.5 A | 3 A | 0.118 in 3 mm | 8-MSOP 8-TSSOP Exposed Pad | Half-Bridge | AEC-Q100 | 2 | 114 V | MOSFET (N-Channel) | Independent | 5 ns | 8 ns | -40 °C | 150 °C | Surface Mount | Automotive | 8-MSOP-EP | 7.2 V | 13.5 V |
Analog Devices Inc./Maxim Integrated | 1.85 V 3.25 V | Non-Inverting | 2.5 A | 3 A | 0.118 in 3 mm | 8-MSOP 8-TSSOP Exposed Pad | Half-Bridge | 2 | 114 V | MOSFET (N-Channel) | Independent | 5 ns | 8 ns | -55 °C | 150 °C | Surface Mount | 8-MSOP-EP | 7.2 V | 13.5 V | ||
Analog Devices Inc./Maxim Integrated | 1.85 V 3.25 V | Non-Inverting | 2.5 A | 3 A | 0.118 in 3 mm | 8-MSOP 8-TSSOP Exposed Pad | Half-Bridge | AEC-Q100 | 2 | 114 V | MOSFET (N-Channel) | Independent | 5 ns | 8 ns | -40 C | 125 °C | Surface Mount | Automotive | 8-MSOP-EP | 7.2 V | 13.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 513 | $ 9.58 | 1m+ |
Description
General part information
LTC4444 Series
The LTC4444 is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a synchronous DC/DC converter with supply voltages up to 100V. This powerful driver reduces switching losses in MOSFETs with high gate capacitance.The LTC4444 is configured for two supply-independent inputs. The high side input logic signal is internally level-shifted to the bootstrapped supply, which may function at up to 114V above ground.The LTC4444 contains undervoltage lockout circuits that disable the external MOSFETs when activated. Adaptive shoot-through protection prevents both MOSFETs from conducting simultaneously.For a similar driver in this product family, please refer to the chart below.ParameterLTC4444LTC4446LTC4444-5Shoot-Through ProtectionYesNoYesAbsolute Max TS100V100V100VMOSFET Gate Drive7.2V to 13.5V7.2V to 13.5V4.5V to 13.5VVCCUV+6.6V6.6V4VVCCUV–6.15V6.15V3.55VApplicationsDistributed Power ArchitecturesAutomotive Power SuppliesHigh Density Power ModulesTelecommunications
Documents
Technical documentation and resources