Specification	BXK9R4R5-40HJ

Current - Continuous Drain (Id) @ 25°C	91 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	3517 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	71 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	MLPAK56-WF
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.15 V

BXK9R4R5-40H Series

Logic level N-Channel MOSFET in MLPAK56-WF (SOT8038-2)

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)	Grade	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Qualification	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Nexperia USA Inc. BXK9R4R5-40HJ	2.15 V	4.5 mOhm	91 A	Surface Mount	4.5 V 10 V	8-PowerTDFN	71 W	Automotive	MLPAK56-WF	40 V	N-Channel	20 V	AEC-Q101	175 °C	-55 °C	MOSFET (Metal Oxide)	50 nC	3517 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

BXK9R4R5-40H Series

Logic level N-Channel MOSFET in a small MLPAK56-WF (SOT8038-2) package, using Trench 9 technology. This product has been designed and qualified to meet AEC-Q101 requirements delivering high performance and reliability.

Documents

Technical documentation and resources

BXK9R4R5-40HJ | Datasheet

Datasheet

MLPAK56-WF: 8 terminals; body 5.15 x 6.2 x 1.0 mm

Package information