Discrete Semiconductor Products

SI0205-TP

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N-CHANNEL MOSFET,SOT-523

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Discrete Semiconductor Products

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N-CHANNEL MOSFET,SOT-523

Technical Specifications

Parameters and characteristics for this part

Specification	SI0205-TP

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	24 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-523
Power Dissipation (Max)	830 mW
Rds On (Max) @ Id, Vgs [Max]	4 Ohm
Supplier Device Package	SOT-523
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	800 mV

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id
Micro Commercial Components SI0205-TP	2.5 V 4.5 V	24 pF	MOSFET (Metal Oxide)	N-Channel	8 V	4 Ohm	830 mW	-55 °C	150 °C	Surface Mount	50 V	200 mA	SOT-523	SOT-523	800 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 50 V 200mA 830mW Surface Mount SOT-523

Technical documentation and resources