Discrete Semiconductor Products

MPSA42,412

Obsolete

BJT TO92 300V NPN 0.625W 150C

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Discrete Semiconductor Products

Obsolete

BJT TO92 300V NPN 0.625W 150C

Technical Specifications

Parameters and characteristics for this part

Specification	MPSA42,412

Current - Collector (Ic) (Max)	0.1 mA
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	40
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-92-3 (TO-226AA) Formed Leads, TO-226-3
Package Name	TO-92-3
Power - Max	0.5 W
Transistor Type	NPN
Vce Saturation (Max)	500 mV
Voltage - Collector Emitter Breakdown (Max)	300 V

NPN Bipolar Small Signal Transistor

Part	Transistor Type	Operating Temperature	Current - Collector Cutoff (Max)	Power - Max	Mounting Type	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Package Name	Package / Case	DC Current Gain (hFE) (Min)	Current - Collector (Ic) (Max)	Vce Saturation (Max)
NXP USA Inc. MPSA42,412	NPN	150 °C	100 nA	0.5 W	Through Hole	50 MHz	300 V	TO-92-3	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	40	0.1 mA	500 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

3D models and CAD resources for this part

General part information

This High Voltage NPN Bipolar Transistor is designed for general purpose amplifier applications. This device is housed in the TO-92 package.

Technical documentation and resources