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TO-252AA (DPAK)
Discrete Semiconductor Products

IRFR3910TRPBF

Active
INFINEON

POWER MOSFET, N CHANNEL, 100 V, 16 A, 0.115 OHM, TO-252AA, SURFACE MOUNT

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TO-252AA (DPAK)
Discrete Semiconductor Products

IRFR3910TRPBF

Active
INFINEON

POWER MOSFET, N CHANNEL, 100 V, 16 A, 0.115 OHM, TO-252AA, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFR3910TRPBF
Current - Continuous Drain (Id) @ 25°C16 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs44 nC
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)79 W
Rds On (Max) @ Id, Vgs115 mOhm
Supplier Device PackageTO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.61
10$ 1.02
100$ 0.68
500$ 0.54
1000$ 0.49
Digi-Reel® 1$ 1.61
10$ 1.02
100$ 0.68
500$ 0.54
1000$ 0.49
N/A 2820$ 0.73
Tape & Reel (TR) 2000$ 0.45
4000$ 0.42
6000$ 0.40
NewarkEach (Supplied on Cut Tape) 1$ 1.35
10$ 0.91
25$ 0.82
50$ 0.73
100$ 0.64
250$ 0.59
500$ 0.55
1000$ 0.48

Description

General part information

IRFR3910 Series

The IRFR3910TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.