Deep-Dive with AI
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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | SI7758DP-T1-GE3 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 60 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 160 nC |
| Input Capacitance (Ciss) (Max) | 7150 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | PowerPAK® SO-8 |
| Package Name | PowerPAK® SO-8 |
| Power Dissipation (Max) | 104 W, 6.25 W |
| Rds On (Max) | 2.9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.7 V |
| Part | Technology | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs(th) (Max) | Drain to Source Voltage (Vdss) | Vgs (Max) | Power Dissipation (Max) | Gate Charge (Max) | Package / Case | Mounting Type | Current - Continuous Drain (Id) (Tc) | Rds On (Max) | Input Capacitance (Ciss) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | FET Type | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Dale | MOSFET (Metal Oxide) | 10 V | 4.5 V | 2.7 V | 30 V | 20 V | 6.25 W 104 W | 160 nC | PowerPAK® SO-8 | Surface Mount | 60 A | 2.9 mOhm | 7150 pF | -55 °C | 150 °C | N-Channel | PowerPAK® SO-8 |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | 1m+ |
CAD
3D models and CAD resources for this part
Description
General part information
SI7758 Series
N-Channel 30 V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Documents
Technical documentation and resources