Specification	BUK9M15-60EX

Current - Continuous Drain (Id) @ 25°C	47 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	17 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2230 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	75 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2.45 V

BUK9M15-60E Series

N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK33

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	FET Type	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Grade
Nexperia USA Inc. BUK9M15-60EX	MOSFET (Metal Oxide)	5 V 10 V	75 W	10 V	Surface Mount	13 mOhm	2230 pF	60 V	175 °C	-55 °C	47 A	N-Channel	AEC-Q101	17 nC	LFPAK33	2.45 V	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	540	$ 1.77

Description

General part information

BUK9M15-60E Series

Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.