Discrete Semiconductor Products

SI7403BDN-T1-E3

Obsolete

MOSFET P-CH 20V 8A PPAK1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 8A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7403BDN-T1-E3

Current - Continuous Drain (Id) (Tc)	8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	15 nC
Input Capacitance (Ciss) (Max)	430 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	9.6 W, 3.1 W
Rds On (Max)	74 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

Part	Package / Case	Technology	Mounting Type	Rds On (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Input Capacitance (Ciss) (Max)	Package Name	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)
Vishay Dale SI7403BDN-T1-E3	PowerPAK® 1212-8	MOSFET (Metal Oxide)	Surface Mount	74 mOhm	20 V	3.1 W 9.6 W	2.5 V	4.5 V	8 V	-55 °C	150 °C	P-Channel	430 pF	PowerPAK® 1212-8	15 nC	8 A	1 V
Vishay Dale SI7403BDN-T1-GE3	PowerPAK® 1212-8	MOSFET (Metal Oxide)	Surface Mount	74 mOhm	20 V	3.1 W 9.6 W	2.5 V	4.5 V	8 V	-55 °C	150 °C	P-Channel	430 pF	PowerPAK® 1212-8	15 nC	8 A	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	30d+

3D models and CAD resources for this part

General part information

P-Channel 20 V 8A (Tc) 3.1W (Ta), 9.6W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources