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F433MR12W1M1HB76BPSA1

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THE F4-33MR12W1M1H_B76 IS A COOLSIC™ MOSFET FOURPACK MODULE 1200 V, 33MΩ

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Discrete Semiconductor Products

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THE F4-33MR12W1M1H_B76 IS A COOLSIC™ MOSFET FOURPACK MODULE 1200 V, 33MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	F433MR12W1M1HB76BPSA1

Configuration	4 N-Channel
Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	1.2 kV
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	74 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2200 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs	32.3 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5.15 V

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
INFINEON F433MR12W1M1HB76BPSA1	25 A	2200 pF	Module	32.3 mOhm	1.2 kV	1200 V	Chassis Mount	Silicon Carbide (SiC)	4 N-Channel	175 °C	-40 °C	5.15 V	74 nC

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General part information

EasyPACK™ 1BCoolSiC™ MOSFETfourpack module 1200 V, 33 mΩ G1 with NTC andPressFITcontact technology.

Technical documentation and resources