Discrete Semiconductor Products

2SK4065-DL-1EX

Obsolete

MOSFET N-CH 75V 100A TO263-2

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 75V 100A TO263-2

Technical Specifications

Parameters and characteristics for this part

Specification	2SK4065-DL-1EX

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	75 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	220 nC
Input Capacitance (Ciss) (Max) @ Vds	12200 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	90 W, 1.65 W
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	TO-263-2
Technology	MOSFET (Metal Oxide)

Part	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max)	Operating Temperature	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)
ON Semiconductor 2SK4065-DL-1EX	220 nC	N-Channel	1.65 W 90 W	150 °C	MOSFET (Metal Oxide)	6 mOhm	12200 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	100 A	Surface Mount	TO-263-2	75 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 75 V 100A (Ta) 1.65W (Ta), 90W (Tc) Surface Mount TO-263-2

Technical documentation and resources