Discrete Semiconductor Products

2N4424 APP PBFREE

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BIPOLAR TRANSISTORS - BJT NPN 60VCBO 40VCEO 5.0VEBO 500MA 625MW

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Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS - BJT NPN 60VCBO 40VCEO 5.0VEBO 500MA 625MW

Technical Specifications

Parameters and characteristics for this part

Specification	2N4424 APP PBFREE

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	180
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

Part	Power - Max [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Package / Case	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Central Semiconductor Corp 2N4424 APP PBFREE	625 mW	TO-92-3	300 mV	NPN	Through Hole	150 °C	-65 °C	TO-226AA	TO-226-3 TO-92-3	500 mA	100 nA	40 V	180

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.09
Mouser	N/A	10000	$ 0.09
		24000	$ 0.08

General part information

BIPOLAR TRANSISTORS - BJT NPN 60VCBO 40VCEO 5.0VEBO 500MA 625MW

Technical documentation and resources