Discrete Semiconductor Products

2N3397 TIN/LEAD

Obsolete

BIPOLAR TRANSISTORS - BJT NPN 25VCBO 25VCEO 5.0VEBO 100MA 360MW

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

BIPOLAR TRANSISTORS - BJT NPN 25VCBO 25VCEO 5.0VEBO 100MA 360MW

Technical Specifications

Parameters and characteristics for this part

Specification	2N3397 TIN/LEAD

Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	55
Mounting Type	Through Hole
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Supplier Device Package	TO-92-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	25 V

Part	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Package / Case
Central Semiconductor Corp 2N3397 TIN/LEAD	NPN	55	Through Hole	TO-92-3	100 nA	25 V	TO-226AA	TO-226-3 TO-92-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00
Mouser	N/A	2500	$ 0.47

General part information

BIPOLAR TRANSISTORS - BJT NPN 25VCBO 25VCEO 5.0VEBO 100MA 360MW

Technical documentation and resources

No documents available