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SOT353
Discrete Semiconductor Products

BAS21PG-QX

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Nexperia USA Inc.

DUAL ISOLATED HIGH-VOLTAGE SWITCHING DIODE

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SOT353
Discrete Semiconductor Products

BAS21PG-QX

Active
Nexperia USA Inc.

DUAL ISOLATED HIGH-VOLTAGE SWITCHING DIODE

Technical Specifications

Parameters and characteristics for this part

SpecificationBAS21PG-QX
Current - Average Rectified (Io) (per Diode)225 mA
Current - Reverse Leakage @ Vr100 nA
Diode Configuration2 Independent
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction150 ¯C
Package / CaseSOT-353, SC-70-5, 5-TSSOP
QualificationAEC-Q101
Reverse Recovery Time (trr)50 ns
Speed500 ns, 200 mA
Supplier Device PackageSOT-353
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]250 V
Voltage - Forward (Vf) (Max) @ If1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.10

Description

General part information

BAS21PG-Q Series

Dual high-voltage switching diode encapsulated in a very small SOT353 (SC-88A) Surface-Mounted Device (SMD) plastic package.