Specification	CY62157EV30LL-45ZSXIT

Access Time	45 ns
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	512K x 16
Memory Size	1024 KB
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 C
Operating Temperature [Min]	-40 ¯C
Package / Case	44-TSOP (0.400", 10.16mm Width)
Supplier Device Package	44-TSOP II
Technology	SRAM - Asynchronous
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	2.2 V
Write Cycle Time - Word, Page [custom]	45 ns
Write Cycle Time - Word, Page [custom]	45 ns

CY62157EV30LL Series

Part	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Access Time	Technology	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Mounting Type	Memory Size	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Memory Type	Memory Interface	Memory Organization	Memory Format	Package / Case [y]	Package / Case [x]
INFINEON CY62157EV30LL-45ZSXIT	85 C	-40 ¯C	44-TSOP II	45 ns	SRAM - Asynchronous	3.6 V	2.2 V	44-TSOP (0.400" 10.16mm Width)	Surface Mount	1024 KB	45 ns	45 ns	Volatile	Parallel	512K x 16	SRAM
INFINEON CY62157EV30LL-45ZSXIT	85 C	-40 ¯C	44-TSOP II	45 ns	SRAM - Asynchronous	3.6 V	2.2 V	44-TSOP (0.400" 10.16mm Width)	Surface Mount	1024 KB	45 ns	45 ns	Volatile	Parallel	512K x 16	SRAM
INFINEON CY62157EV30LL-45ZXIT	85 C	-40 ¯C	48-TSOP I	45 ns	SRAM - Asynchronous	3.6 V	2.2 V	48-TFSOP	Surface Mount	1024 KB	45 ns	45 ns	Volatile	Parallel	512K x 16	SRAM	18.4 mm	0.724 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1421	$ 7.66
		1421	$ 7.66
		1450	$ 5.24
		1450	$ 5.24
Mouser	N/A	1	$ 12.78
		10	$ 11.86
		25	$ 11.49
		50	$ 11.22
		100	$ 10.94
		250	$ 10.70
		500	$ 10.51
		1000	$ 10.11
Newark	Each	1	$ 14.54
		10	$ 12.92
		25	$ 11.88
		50	$ 11.67
		100	$ 11.45
		250	$ 10.92
		500	$ 10.54

Description

General part information

CY62157EV30LL Series

CY62157EV30LL-45ZSXIT is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (active-low CE1 HIGH or CE2 LOW or both active-low BHE and active-low BLE are HIGH). The input or output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (active-low CE1 HIGH or CE2 LOW), the outputs are disabled (active-low OE HIGH), byte high enable and byte low enable are disabled (active-low BHE, active-low BLE HIGH), or a write operation is active (active-low CE1 LOW, CE2 HIGH and active-low WE LOW). Applications include smart buildings, uninterruptible power supplies (UPS).

Documents

Technical documentation and resources

CY62157EV30LL-45ZSXIT | Datasheet

Datasheet

CY62157EV30LL-45ZSXIT | Datasheet

Datasheet