Specification	DS1265AB-100+

Access Time	100 ns
Memory Format	NVSRAM
Memory Interface	Parallel
Memory Organization	1M x 8
Memory Size	1024 KB
Memory Type	Non-Volatile
Mounting Type	Through Hole
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	36-DIP Module (0.610", 15.49mm)
Supplier Device Package	36-EDIP
Technology	NVSRAM (Non-Volatile SRAM)
Voltage - Supply [Max]	5.25 V
Voltage - Supply [Min]	4.75 V
Write Cycle Time - Word, Page [x]	100 ns
Write Cycle Time - Word, Page [y]	100 ns

DS1265AB Series

Part	Supplier Device Package	Technology	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	Memory Interface	Memory Size	Memory Organization	Memory Type	Package / Case	Memory Format	Access Time	Operating Temperature [Min]	Operating Temperature [Max]	Write Cycle Time - Word, Page	Write Cycle Time - Word, Page [y]	Write Cycle Time - Word, Page [x]
Analog Devices Inc./Maxim Integrated DS1265AB-70+	36-EDIP	NVSRAM (Non-Volatile SRAM)	4.75 V	5.25 V	Through Hole	Parallel	1024 KB	1M x 8	Non-Volatile	36-DIP Module (0.610" 15.49mm)	NVSRAM	70 ns	0 °C	70 °C	70 ns
Analog Devices Inc./Maxim Integrated DS1265AB-100+	36-EDIP	NVSRAM (Non-Volatile SRAM)	4.75 V	5.25 V	Through Hole	Parallel	1024 KB	1M x 8	Non-Volatile	36-DIP Module (0.610" 15.49mm)	NVSRAM	100 ns	0 °C	70 °C		100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1265AB-70	36-EDIP	NVSRAM (Non-Volatile SRAM)	4.75 V	5.25 V	Through Hole	Parallel	1024 KB	1M x 8	Non-Volatile	36-DIP Module (0.610" 15.49mm)	NVSRAM	70 ns	0 °C	70 °C	70 ns
Analog Devices Inc./Maxim Integrated DS1265AB-70IND+	36-EDIP	NVSRAM (Non-Volatile SRAM)	4.75 V	5.25 V	Through Hole	Parallel	1024 KB	1M x 8	Non-Volatile	36-DIP Module (0.610" 15.49mm)	NVSRAM	70 ns	-40 ¯C	85 C	70 ns
Analog Devices Inc./Maxim Integrated DS1265AB-100	36-EDIP	NVSRAM (Non-Volatile SRAM)	4.75 V	5.25 V	Through Hole	Parallel	1024 KB	1M x 8	Non-Volatile	36-DIP Module (0.610" 15.49mm)	NVSRAM	100 ns	0 °C	70 °C		100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1265AB-70IND	36-EDIP	NVSRAM (Non-Volatile SRAM)	4.75 V	5.25 V	Through Hole	Parallel	1024 KB	1M x 8	Non-Volatile	36-DIP Module (0.610" 15.49mm)	NVSRAM	70 ns	-40 ¯C	85 C	70 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 127.42	1m+
		189	$ 127.42

Description

General part information

DS1265AB Series

The DS1265 8M Nonvolatile SRAMs are 8,388,608-bit, fully static nonvolatile SRAMs organized as 1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles which can be executed and no additional support circuitry is required for microprocessor interfacing.

Documents

Technical documentation and resources

DS1265AB-DS1265Y: 8M Nonvolatile SRAM Data Sheet (Rev.3)

Data Sheet