Discrete Semiconductor Products

IRF624SPBF

LTB

MOSFET N-CH 250V 4.4A D2PAK

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Discrete Semiconductor Products

LTB

MOSFET N-CH 250V 4.4A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRF624SPBF

Current - Continuous Drain (Id) @ 25°C	4.4 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	260 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.1 W, 50 W
Rds On (Max) @ Id, Vgs	1.1 Ohm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division IRF624SPBF	4.4 A	4 V	N-Channel	10 V	20 V	260 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.1 W 50 W	250 V	Surface Mount	14 nC	-55 °C	150 °C	TO-263 (D2PAK)	MOSFET (Metal Oxide)	1.1 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 250 V 4.4A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources

No documents available