Discrete Semiconductor Products

PMPB20UN,115

Obsolete

MOSFET N-CH 20V 6.6A 6DFN

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 6.6A 6DFN

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB20UN,115

Current - Continuous Drain (Id) (Ta)	6.6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	7.1 nC
Input Capacitance (Ciss) (Max)	460 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UDFN Exposed Pad
Package Length	2 mm
Package Name	6-DFN2020MD
Package Width	2 mm
Power Dissipation (Max)	12.5 W, 1.7 W
Rds On (Max)	25 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

Part	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Ta)	Package / Case	Technology	Package Name	Package Width	Package Length	Drain to Source Voltage (Vdss)	Rds On (Max)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Vgs (Max)	Mounting Type	Power Dissipation (Max)	FET Type
NXP USA Inc. PMPB20UN,115	460 pF	4.5 V	1.8 V	6.6 A	6-UDFN Exposed Pad	MOSFET (Metal Oxide)	6-DFN2020MD	2 mm	2 mm	20 V	25 mOhm	1 V	-55 °C	150 °C	7.1 nC	8 V	Surface Mount	1.7 W 12.5 W	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 20 V 6.6A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount 6-DFN2020MD (2x2)

Technical documentation and resources