Discrete Semiconductor Products

PMPB20UN,115

Obsolete

MOSFET N-CH 20V 6.6A 6DFN

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 6.6A 6DFN

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB20UN,115

Current - Continuous Drain (Id) @ 25°C	6.6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.1 nC
Input Capacitance (Ciss) (Max) @ Vds	460 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	1.7 W, 12.5 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	6-DFN2020MD (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds
Freescale Semiconductor - NXP PMPB20UN,115	20 V	25 mOhm	Surface Mount	1.7 W 12.5 W	8 V	N-Channel	1 V	MOSFET (Metal Oxide)	6-DFN2020MD (2x2)	-55 °C	150 °C	7.1 nC	6-UDFN Exposed Pad	6.6 A	1.8 V 4.5 V	460 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 6.6A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount 6-DFN2020MD (2x2)

Technical documentation and resources