Integrated Circuits (ICs)

CY62177G30-55ZXI

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INFINEON

SRAM, 32MBIT, -40 TO 85DEG C ROHS COMPLIANT: YES

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Integrated Circuits (ICs)

CY62177G30-55ZXI

Active

INFINEON

SRAM, 32MBIT, -40 TO 85DEG C ROHS COMPLIANT: YES

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	CY62177G30-55ZXI

Access Time	55 ns
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	2M x 16, 4M x 8
Memory Size	4 MB
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 C
Operating Temperature [Min]	-40 ¯C
Package / Case	48-TFSOP
Package / Case [x]	0.724 in
Package / Case [y]	18.4 mm
Supplier Device Package	48-TSOP I
Technology	SRAM - Asynchronous
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	2.2 V
Write Cycle Time - Word, Page	55 ns

CY62177 Series

Part	Operating Temperature [Max]	Operating Temperature [Min]	Memory Type	Mounting Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Memory Size	Access Time	Memory Interface	Memory Organization	Technology	Write Cycle Time - Word, Page	Memory Format	Supplier Device Package	Package / Case [y]	Package / Case [x]	Memory Organization [custom]	Memory Organization [custom]
INFINEON CY62177EV18LL-70BAXIT	85 C	-40 ¯C	Volatile	Surface Mount	2.25 V	1.65 V	48-TFBGA	4 MB	70 ns	Parallel	2M x 16 4M x 8	SRAM - Asynchronous	70 ns	SRAM	48-FBGA (8x9.5)
INFINEON CY62177G30-55ZXI	85 C	-40 ¯C	Volatile	Surface Mount	3.6 V	2.2 V	48-TFSOP	4 MB	55 ns	Parallel	2M x 16 4M x 8	SRAM - Asynchronous	55 ns	SRAM	48-TSOP I	18.4 mm	0.724 in
INFINEON CY62177GE30-55ZXI	85 C	-40 ¯C	Volatile	Surface Mount	3.6 V	2.2 V	48-TFSOP	4 MB	55 ns	Parallel		SRAM - Asynchronous	55 ns	SRAM	48-TSOP I	18.4 mm	0.724 in	16	2 M
INFINEON CY62177GE30-55ZXIT	85 C	-40 ¯C	Volatile	Surface Mount	3.6 V	2.2 V	48-TFSOP	4 MB	55 ns	Parallel		SRAM - Asynchronous	55 ns	SRAM	48-TSOP I	18.4 mm	0.724 in	16	2 M
INFINEON CY62177ESL-55ZXI	85 C	-40 ¯C	Volatile	Surface Mount	3.6 V 5.5 V	2.2 V 4.5 V	48-TFSOP	4 MB	55 ns	Parallel	2M x 16 4M x 8	SRAM - Asynchronous	55 ns	SRAM	48-TSOP I	18.4 mm	0.724 in
INFINEON CY62177EV30LL-55ZXI	85 C	-40 ¯C	Volatile	Surface Mount	3.7 V	2.2 V	48-TFSOP	4 MB	55 ns	Parallel	2M x 16 4M x 8	SRAM - Asynchronous	55 ns	SRAM	48-TSOP I	18.4 mm	0.724 in
INFINEON CY62177ESL-55ZXI	85 C	-40 ¯C	Volatile	Surface Mount	3.6 V 5.5 V	2.2 V 4.5 V	48-TFSOP	4 MB	55 ns	Parallel	2M x 16 4M x 8	SRAM - Asynchronous	55 ns	SRAM	48-TSOP I	18.4 mm	0.724 in
INFINEON CY62177G30-55ZXIT	85 C	-40 ¯C	Volatile	Surface Mount	3.6 V	2.2 V	48-TFSOP	4 MB	55 ns	Parallel		SRAM - Asynchronous	55 ns	SRAM	48-TSOP I	18.4 mm	0.724 in	16	2 M
INFINEON CY62177EV30LL-55ZXI	85 C	-40 ¯C	Volatile	Surface Mount	3.7 V	2.2 V	48-TFSOP	4 MB	55 ns	Parallel	2M x 16 4M x 8	SRAM - Asynchronous	55 ns	SRAM	48-TSOP I	18.4 mm	0.724 in
INFINEON CY62177G30-55BAXIT	85 C	-40 ¯C	Volatile	Surface Mount	3.6 V	2.2 V	48-TFBGA	4 MB	55 ns	Parallel		SRAM - Asynchronous	55 ns	SRAM	48-FBGA (8x9.5)			16	2 M

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 21.43
	Tray	96	$ 48.39
Newark	Each	1	$ 52.80

Description

General part information

CY62177 Series

Infineon's 32Mb density Ultra-Low-Power (ULP) SRAM with on-chip ECC offers high-performance and reliability for mission-critical industrial systems. With an industry-leading standby current of 19µA at +85°C, it ensures best-in-class battery lifetimes. This high-capacity parallel interface asynchronous SRAM, based on 65-nm technology, features embedded ECC and bit-interleaving, providing freedom from soft errors with < 0.1 FITs/Mbit.

Documents

Technical documentation and resources