Discrete Semiconductor Products

IPU06N03LAGXK

Obsolete

MOSFET N-CH 25V 50A TO251-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 50A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPU06N03LAGXK

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2653 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	5.9 mOhm
Supplier Device Package	P-TO251-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package
INFINEON IPU06N03LAGXK	22 nC	Through Hole	83 W	2 V	50 A	5.9 mOhm	N-Channel	175 °C	-55 °C	MOSFET (Metal Oxide)	4.5 V 10 V	20 V	2653 pF	IPAK TO-251-3 Short Leads TO-251AA	25 V	P-TO251-3-1
INFINEON IPU06N03LB G	22 nC	Through Hole	94 W	2 V	50 A	6.3 mOhm	N-Channel	175 °C	-55 °C	MOSFET (Metal Oxide)	4.5 V 10 V	20 V	2800 pF	IPAK TO-251-3 Short Leads TO-251AA	30 V	PG-TO251-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 25 V 50A (Tc) 83W (Tc) Through Hole P-TO251-3-1

Technical documentation and resources