Discrete Semiconductor Products

FF4MR12W2M1HB11BPSA1

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SILICON CARBIDE MOSFET, HALF BRIDGE, N CHANNEL, 170 A, 1.2 KV, 0.004 OHM, MODULE

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Discrete Semiconductor Products

Active

SILICON CARBIDE MOSFET, HALF BRIDGE, N CHANNEL, 170 A, 1.2 KV, 0.004 OHM, MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	FF4MR12W2M1HB11BPSA1

Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	170 A
Drain to Source Voltage (Vdss)	1.2 kV
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs [Max]	594 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	17600 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	Module
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5.15 V

Part	Configuration	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Technology	Operating Temperature [Max]	Operating Temperature [Min]
INFINEON FF4MR12W2M1HB11BPSA1	2 N-Channel	4 mOhm	170 A	Chassis Mount	Module	17600 pF	594 nC	1.2 kV	1200 V	5.15 V	Module	Silicon Carbide (SiC)	175 °C	-40 °C

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General part information

EasyDUAL™ 2BCoolSiC™ MOSFEThalf-bridge module 1200 V, 4 mΩ G1 with integrated NTC temperature sensor andPressFIT Contact Technology.

Technical documentation and resources