Discrete Semiconductor Products

F415MR12W2M1B76BOMA1

Obsolete

MOSFET 4N-CH 1200V 75A AG-EASY1B

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Discrete Semiconductor Products

Obsolete

MOSFET 4N-CH 1200V 75A AG-EASY1B

Technical Specifications

Parameters and characteristics for this part

Specification	F415MR12W2M1B76BOMA1

Configuration	4 N-Channel (Full Bridge)
Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	1.2 kV
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	186 nC
Input Capacitance (Ciss) (Max) @ Vds	5520 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs [Max]	15 mOhm
Supplier Device Package	AG-EASY1B-2
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5.55 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Configuration	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds
INFINEON F415MR12W2M1B76BOMA1	-40 °C	150 °C	Module	AG-EASY1B-2	5.55 V	1.2 kV	1200 V	4 N-Channel (Full Bridge)	186 nC	Chassis Mount	75 A	15 mOhm	Silicon Carbide (SiC)	5520 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Mosfet Array 1200V (1.2kV) 75A (Tj) Chassis Mount AG-EASY1B-2

Technical documentation and resources

No documents available