Technical Specifications
Parameters and characteristics for this part
| Specification | DDB2U60N07W1RFB58BPSA1 |
|---|---|
| Current - Average Rectified (Io) | 60 A |
| Current - Reverse Leakage @ Vr | 3.39 mA |
| Diode Type | Single Phase |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | Module |
| Technology | Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V |
| Voltage - Peak Reverse (Max) | 650 V |
| Part | Diode Type | Package / Case | Voltage - Peak Reverse (Max) | Voltage - Forward (Vf) (Max) @ If | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Current - Average Rectified (Io) | Mounting Type | Current - Reverse Leakage @ Vr |
|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | Single Phase | Module | 650 V | 1.45 V | -40 °C | 150 °C | Schottky | 60 A | Chassis Mount | 3.39 mA |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DDB2U60N07 Series
650 V, 60 A EasyBRIDGE™ rectifier bridge modules with CoolSiC™ MOSFET andCoolSiC™ Schottky diode G5 650 V, NTC, in an Easy 1B housing withPressFITcontact technology.
Documents
Technical documentation and resources