Discrete Semiconductor Products

IRF7815TRPBF

Active

IR MOSFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 43 MOHM;

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

IR MOSFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 43 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7815TRPBF

Current - Continuous Drain (Id) @ 25°C	5.1 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1647 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	43 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Package / Case	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type
INFINEON IRF7815TRPBF	2.5 W	150 °C	-55 °C	5.1 A	20 V	1647 pF	8-SO	38 nC	0.154 in	8-SOIC	3.9 mm	150 V	43 mOhm	MOSFET (Metal Oxide)	5 V	N-Channel	10 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly