Discrete Semiconductor Products

MBR120200CT

Obsolete

DIODE MOD SCHOTT 200V 60A 2TOWER

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Discrete Semiconductor Products

Obsolete

DIODE MOD SCHOTT 200V 60A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MBR120200CT

Current - Average Rectified (Io) (per Diode)	60 A
Current - Reverse Leakage @ Vr	1 mA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Twin Tower
Speed	500 ns, 200 mA
Supplier Device Package	Twin Tower
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	920 mV

Part	Mounting Type	Package / Case	Technology	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Speed	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package
GeneSiC Semiconductor MBR120200CT	Chassis Mount	Twin Tower	Schottky	1 Pair Common Cathode	60 A	200 mA 500 ns	-55 °C	150 °C	920 mV	1 mA	200 V	Twin Tower
GeneSiC Semiconductor MBR120200CTR	Chassis Mount	Twin Tower	Schottky	1 Pair Common Anode	60 A	200 mA 500 ns	-55 °C	150 °C	920 mV	1 mA	200 V	Twin Tower

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 54.37

General part information

Diode Array 1 Pair Common Cathode 200 V 60A Chassis Mount Twin Tower

Technical documentation and resources