Discrete Semiconductor Products

TSM033NA04LCR RLG

Obsolete

MOSFET N-CH 40V 141A 8PDFN

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 141A 8PDFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSM033NA04LCR RLG

Current - Continuous Drain (Id) @ 25°C	141 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	3130 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	3.3 mOhm
Supplier Device Package	8-PDFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
Taiwan Semiconductor Corporation TSM033NA04LCR RLG	150 °C	-55 °C	125 W	8-PowerTDFN	40 V	Surface Mount	141 A	4.5 V 10 V	3.3 mOhm	3130 pF	MOSFET (Metal Oxide)	20 V	N-Channel	2.5 V	8-PDFN (5x6)
Taiwan Semiconductor Corporation TSM033NA03CR RLG	150 °C	-55 °C	96 W	8-PowerTDFN	30 V	Surface Mount	129 A	4.5 V 10 V	3.3 mOhm	1850 pF	MOSFET (Metal Oxide)	20 V	N-Channel	2.5 V	8-PDFN (5x6)	31 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 141A (Tc) 125W (Tc) Surface Mount 8-PDFN (5x6)

Technical documentation and resources

No documents available