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TO-263
Discrete Semiconductor Products

HGT1S20N35G3VLS

Obsolete
ON Semiconductor

IGBT 380V 20A 150W TO263AB

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DocumentsDatasheet
TO-263
Discrete Semiconductor Products

HGT1S20N35G3VLS

Obsolete
ON Semiconductor

IGBT 380V 20A 150W TO263AB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationHGT1S20N35G3VLS
Current - Collector (Ic) (Max)20 A
Gate Charge28.7 nC
Input TypeLogic
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]150 W
Supplier Device PackageTO-263 (D2PAK)
Td (on/off) @ 25°C [Max]15 µs
Td (on/off) @ 25°C [Min]-
Test Condition300 V, 10 A, 25 Ohm, 5 V
Vce(on) (Max) @ Vge, Ic2.8 V
Voltage - Collector Emitter Breakdown (Max)375 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

HGT1S20N60C3S Series

45A, 600V, UFS Series N-Channel IGBT

Documents

Technical documentation and resources