Discrete Semiconductor Products

MCU30N02-TP

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MOSFET N-CH 20V 30A DPAK

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Discrete Semiconductor Products

Active

MOSFET N-CH 20V 30A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	MCU30N02-TP

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds	1700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Rds On (Max) @ Id, Vgs [Max]	7 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)
Micro Commercial Components MCU30N02-TP	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	30 A	1700 pF	N-Channel	7 mOhm	10 V	DPAK	-55 °C	175 ░C	1 V	29 nC	20 V	MOSFET (Metal Oxide)	1.8 V 4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 30A (Tc) 30W (Tc) Surface Mount DPAK

Technical documentation and resources